7MBR10SA120 View Datasheet(PDF) - Fuji Electric
Part Name
Description
MFG CO.
'7MBR10SA120' PDF : 7 Pages View PDF
IGBT Modules
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage
25
Tj= 25 oC (typ.)
VGE= 20V
15V
12V
20
15
10V
10
5
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
25
Tj= 25 oC
Tj= 125 oC
20
15
10
5
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
5000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
1000
500
Cies
100
50
0
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
30
35
7MBR10SA120
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
25
15V
VGE= 20V
12V
20
15
10V
10
5
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
10
8
6
4
2
0
5
1000
Ic= 20A
Ic= 10A
Ic= 5A
10
15
20
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=10A, Tj= 25 oC
25
25
800
20
600
15
400
10
200
5
0
0
0
20
40
60
80
100
Gate charge : Qg [ nC ]
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