ACE4443BFM View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE4443BFM' PDF : 6 Pages View PDF
ACE4443B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4443B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS(V)=-40V
ID=-6A (VGS=-10V)
RDS(ON)＜40mΩ (VGS=-10V)
RDS(ON)＜80mΩ (VGS=-4.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC
TA=25 OC
TA=70 OC
Drain Current (Pulse) * B
Power Dissipation
TA=25 OC
TA=70 OC
Operating and Storage Temperature Range
Packaging Type
SOP-8
Symbol Max Unit
VDS
-40 V
VGS
±20 V
-6
ID
-4.8 A
IDM
-18
3
PD
W
2.1
TJ,TSTG -55 to 150 OC
Ordering information
ACE4443B XX + H
Halogen - free
Pb - free
FM : SOP-8
VER 1.2 1
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