ACE4443BFM View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE4443BFM' PDF : 6 Pages View PDF
ACE4443B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -40
V
Zero Gate Voltage Drain Current
IDSS
VDS=-32V, VGS=0V
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
-1 uA
100 nA
Static Drain-Source On-Resistance RDS(ON)
VGS=-10V, ID=-5.5A
VGS=-4.5V, ID=-4.5A
33
40
mΩ
64
80
Gate Threshold Voltage
VGS(th) VDS=VGS, IDS=-250µA -1
-2
-2.5 V
Forward Transconductance
gFS
VGS=-10V, ID=-5.5A
11
S
Diode Forward Voltage
VSD
Maximum Body-Diode Continuous
Current
IS
ISD=-1A, VGS=0V
-0.75 -1
V
-5
A
Switching
Total Gate Charge
Qg
14
Gate-Source Charge
Qgs
VDS=-10V, ID=-5.5A
VGS=-20V
2.2
nC
Gate-Drain Charge
Qgd
1.9
Turn-On Delay Time
Td(on)
7.7 15.4
Turn-On Rise Time
Turn-Off Delay Time
tf
td(off)
VDS=-20V, RL=3.7Ω,
VGS=-10V, RGEN=3Ω
8
16
ns
26.5 53
Turn-Off Fall Time
tf
11.5 23
Dynamic
Input Capacitance
Ciss
690
Output Capacitance
Coss
VDS=-20V, VGS=0V
f=1MHz
310
pF
Reverse Transfer Capacitance
Crss
75
Note: 1. The value of R θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2 2
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