ACE5807B View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE5807B' PDF : 6 Pages View PDF
ACE5807B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE5807B combines advanced trench MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Standard Product ACE5807B is Pb-free.
Features
VDS (V) = -12V
ID= -16A
RDS(ON)
< 18mΩ (VGS = -4.5V)
< 22mΩ (VGS = -2.5V)
DFN2x2-6L Package
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
TA=25℃
TA=70℃
Drain Current (Pulsed)
Power Dissipation
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol
VDSS
VGSS
ID
IDM
PD
TJ/TSTG
Max
Unit
-12
V
±10
V
-16
A
-13
-65
A
18
W
9
-55~150 ℃
Packaging Type
DFN2*2-6L
Ordering information
ACE5807B XX + H
Halogen - free
Pb - free
MN: DFN2*2-6L
VER 1.2 1
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