ACE7401B View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE7401B' PDF : 7 Pages View PDF
ACE7401B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE7401B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
VDS(V)=-30V
ID=-29A (VGS=-10V)
RDS(ON)＜13mΩ (VGS=-20V)
RDS(ON)＜14mΩ (VGS=-10V)
RDS(ON)＜17mΩ (VGS=-5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
TA=25 OC
TA=100 OC
Drain Current (Pulse)C
Drain Current (Continuous)
TA=25 OC
TA=75 OC
Power Dissipation B
TA=25 OC
TA=100 OC
Power Dissipation A
TA=25 OC
TA=70 OC
Operating and Storage Temperature Range
Symbol Max Unit
VDSS
-30
V
VGSS
±25
V
-29
ID
-23
IDM
-60 A
-12
IDSM
-9.7
PD
PDSM
29
12
W
3.1
2
TJ,TSTG -55 to 150 OC
Thermal Characteristics
Parameter
Symbol Typ Max Units
Maximum Junction-to-Ambient A
t≦10s
Maximum Junction-to-Ambient AD Steady-State RθJA
30 40
60 75 OC/W
Maximum Junction-to-Lead Steady-State RθJL 3.5 4.2
VER 1.2 1
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