ACE8810B View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
ACE8810B
ACE Technology Co., LTD.
'ACE8810B' PDF : 6 Pages View PDF
ACE8810B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description
The ACE8810B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain
configuration.
Features
VDS(V)=20
ID=7A (VGS=4.5V)
RDS(ON)＜21Ω (VGS=4.5V)
RDS(ON)＜25Ω (VGS=2.5V)
RDS(ON)＜33Ω (VGS=1.8V)
ESD Protected: 2,000V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) *AC
TA=25 OC
TA=70 OC
Drain Current (Pulse) *B
Power Dissipation(1)
TA=25 OC
TA=70 OC
Operating and Storage Temperature Range
Packaging Type
TSSOP-8
Symbol Max Unit
VDS
20
V
VGS
±8
V
7
ID
5.6 A
IDM
30
1.5
PD
W
1
TJ,TSTG -55 to 150 OC
VER 1.2 1
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