ACT8810
Rev 9, 15-Nov-12
ActivePathTM CHARGER
ELECTRICAL CHARACTERISTICS CONT’D
(VCHG_IN = 5V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
CHARGER
BAT Reverse Leakage Current
BAT to VSYS On-Resistance
VCHG_IN = 0V, VBAT = 4.2V, IVSYS = 0mA
5
µA
80
mΩ
ISET Pin Voltage
Fast Charge
Precondition
1.02
V
0.12
Charge Termination Voltage
TA = -20°C to 70°C
4.179
TA = -40°C to 85°C
4.170
ACIN = VSYS, CHGLEV = VSYS -10%
4.2
ISET1
4.221
V
4.230
+10%
ACIN = VSYS, CHGLEV = GA -16% 50%ISET +16%
Charge Current
VBAT = 3.5V, ACIN = GA, CHGLEV = VSYS
RISET = 1.2kΩ
Smallest
-10% (450mA +10% mA
or ISET)
ACIN = GA, CHGLEV = GA
Smallest
-10% (90mA or +10%
ISET)
ACIN = VSYS, CHGLEV = VSYS
12%ISET
Precondition Charge Current
ACIN = VSYS, CHGLEV = GA
VBAT = 2.5V, ACIN = GA, CHGLEV = VSYS
RISET = 1.2kΩ
ACIN = GA, CHGLEV = GA
12%ISET
12%ISET
mA
Smallest
(90mA or
12%ISET)
Precondition Threshold Voltage VBAT Voltage Rising
2.75 2.85 2.95 V
Precondition Threshold Hysteresis VBAT Voltage Falling
100
mV
ACIN = VSYS, CHGLEV = VSYS
10%ISET
End-of-Charge Current Threshold
VBAT = 4.2V, ACIN = VSYS, CHGLEV = GA
RISET = 1.2kΩ ACIN = GA, CHGLEV = VSYS
10%ISET
mA
5%ISET
ACIN = GA, CHGLEV = GA
5%ISET
Charge Restart Threshold
Fast Charge Safety Timer
Precondition Safety Timer
THERMAL REGULATION
VSET - VBAT, VBAT Falling
TNORMAL RBTR = 62 kΩ
TPRECONDITION RBTR = 62 kΩ
150
170
190 mV
3
hr
12
hr
Thermal Regulation Threshold
100
145 °C
: ISET (mA) = KISET × 1V/(RISET (kΩ) +0.031) where KISET = 628
2: TPRECONDITION = TNORMAL / 3 (typ)
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
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