AC Characteristics—Write/Erase/Program Operations
Parameter Symbols
Am28F256A Speed Options
JEDEC
Standard
Parameter Description
-70 -90 -120 -150 -200 Unit
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
tOEH
tWC
Write Cycle Time (Note 4)
tAS
Address Setup Time
tAH
Address Hold Time
tDS
Data Setup Time
tDH
Data Hold Time
Output Enable Hold Time for
Embedded Algorithm only
Min
70
90 120 150 200 ns
Min
0
0
0
0
0
ns
Min
45
45
50
60
75
ns
Min
45
45
50
50
50
ns
Min
10
10
10
10
10
ns
Min
10
10
10
10
10
ns
tGHWL
tELWLE
Read Recovery Time before Write
tCSE
Chip Enable Embedded Algorithm
Setup Time
Min
0
0
0
0
0
µs
Min
20
20
20
20
20
ns
tWHEH
tWLWH
tWHWL
tWHWH3
tCH
Chip Enable Hold Time
Min
0
0
0
0
0
ns
tWP
Write Pulse Width
Min
45
45
50
60
60
ns
tWPH
Write Pulse Width HIGH
Min
20
20
20
20
20
ns
Embedded Programming Operation
(Note 2)
Min
14
14
14
14
14
µs
tWHWH4
tVPEL
Embedded Erase Operation (Note 3) Typ
VPP Setup Time to Chip Enable LOW
(Note 4)
Min
5
5
5
5
5
sec
100 100 100 100 100 ns
tVCS
VCC Setup Time to Chip Enable LOW
(Note 4)
Min
50
50
50
50
50
µs
tVPPR
tVPPF
tLKO
VPP Rise Time 90% VPPH (Note 4)
VPP Fall Time 90% VPPL (Note 4)
VCC < VLKO to Reset (Note 4)
Min 500 500 500 500 500 ns
Min 500 500 500 500 500 ns
Min 100 100 100 100 100 ns
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read Only operations.
2. Embedded program operation of 14 µs consists of 10 µs program pulse and 4 µs write recovery before read. This is the
minimum time for one pass through the programming algorithm.
3. Embedded erase operation of 5 sec consists of 4 sec array pre-programming time and 1 sec array erase time. This is a typical
time for one embedded erase operation.
4. Not 100% tested.
Am28F256A
25