AM28F256A-70PCB View Datasheet(PDF) - Advanced Micro Devices
Part Name
Description
MFG CO.
AM28F256A-70PCB
Advanced Micro Devices
'AM28F256A-70PCB' PDF : 35 Pages View PDF
AC CHARACTERISTICS—WRITE/ERASE/PROGRAM OPERATIONS
Alternate CE# Controlled Writes
Parameter Symbols
Am28F256A Speed Options
JEDEC Standard
Parameter Description
-70 -90 -120 -150 -200 Unit
tAVAV
tAVEL
tELAX
tDVEH
tEHDX
tOEH
tWC
Write Cycle Time (Note 4)
tAS
Address Setup Time
tAH
Address Hold Time
tDS
Data Setup Time
tg
Data Hold Time
Output Enable Hold Time for
Embedded Algorithm only
Min 70 90 120 150 200 ns
Min
0
0
0
0
0
ns
Min 45 45
50
60
75
ns
Min 45 45
50
50
50
ns
Min 10 10
10
10
10
ns
Min 10 10
10
10
10
ns
tGHEL
tWLEL
tEHWK
tELEH
tEHEL
tEHEH3
Read Recovery Time Before Write
Min
0
0
0
0
0
µs
tWS
tWH
tCP
tCPH
WE# Setup Time by CE#
WE# Hold Time
Write Pulse Width
Write Pulse Width HIGH
Min
0
0
0
0
0
ns
Min
0
0
0
0
0
ns
Min 65 65
70
80
80
ns
Min 20 20
20
20
20
ns
Embedded Programming Operation
(Note 2)
Min 14 14
14
14
14
µs
tEHEH4
tVPEL
Embedded Erase Operation (Note 3) Typ
5
5
5
5
5
sec
VPP Setup Time to Chip Enable LOW
(Note 4)
Min
100 100
100
100
100
ns
tVCS
VCC Setup Time to Chip Enable LOW
(Note 4)
Min
50
50
50
50
50
µs
tVPPR
VPP Rise Time 90% VPPH (Note 4)
Min 500 500 500 500 500 ns
tVPPF
VPP Fall Time 90% VPPL (Note 4)
Min 500 500 500 500 500 ns
tLKO
VCC < VLKO to Reset (Note 4)
Min 100 100 100 100 100 ns
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read Only operations.
2. Embedded program operation of 14 µs consists of 10 µs program pulse and 4 µs write recovery before read. This is the
minimum time for one pass through the programming algorithm.
3. Embedded erase operation of 5 sec consists of 4 sec array pre-programming time and one sec array erase time. This is a
typical time for one embedded erase operation.
4. Not 100% tested.
Am28F256A
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