AP09N90CW View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP09N90CW' PDF : 4 Pages View PDF
AP09N90CW
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Minimize On-resistance
D
▼ Fast Switching
▼ Simple Drive Requirement
G
S
BVDSS
RDS(ON)
ID
Description
AP09N90C provides minimize on-state resistance , superior switching
performance and high efficiency switching power supply applications.
TO-3P package is preferred for commercial-industrial applications and
provides greater distance between pins to meet the requirements of most
safety specifications.
G
D
S
900V
1.4Ω
7.6A
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
900
± 30
7.6
4.8
25
208
1.6
120
6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Max.
Max.
Value
0.60
40
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200731031
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