AP2012SF4C-P22
2.0 x 1.25 mm Infrared Emitting Diode
DESCRIPTION
z SF4 Made with Gallium Aluminum Arsenide Infrared
Emitting diodes.
PACKAGE DIMENSIONS
FEATURES
z 2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness
z Mechanically and spectrally matched to the phototransistor
z Package : 2000 pcs / reel
z Moisture sensitivity level: 3
z RoHS compliant
l APPLICATIONS
ia z Infrared Illumination for cameras
z Machine vision systems
z Surveillance systems
t z Industrial electronics
z IR data transmission
z Remote control
en RECOMMENDED SOLDERING PATTERN
id(units : mm; tolerance : ± 0.1)
nf Notes:
o 1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.1(0.004") unless otherwise noted.
3. The specifications, characteristics and technical data described in the datasheet are subject to
change without prior notice.
C 4. The device has a single mounting surface. The device must be mounted according to the specifications.
SELECTION GUIDE
Part Number
Emitting Color
(Material)
Lens Type
AP2012SF4C-P22
Infrared (GaAlAs)
Water Clear
Notes:
1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value.
2. Radiant Intensity / luminous flux: +/-15%.
3. Radiant intensity value is traceable to CIE127-2007 standards.
© 2017 Kingbright. All Rights Reserved. Spec No: DSAO8740 / 1203000168 Rev No: V.3B Date: 09/08/2017
Po (mW/sr)
@ 20mA [2]
Min.
Typ.
0.8
1.5
Viewing Angle [1]
2θ1/2
160°
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