APM2313 View Datasheet(PDF) - Anpec Electronics
Part Name
Description
MFG CO.
'APM2313' PDF : 9 Pages View PDF
APM2313
P-Channel Enhancement Mode MOSFET
Features
Pin Description
•
-20V/-1.8A
,
RDS(ON)=108mΩ(typ.)
@
V =-4.5V
GS
RDS(ON)=135mΩ(typ.)
@
V =-2.5V
GS
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• SOT-23 Package
Applications
D
G
S
Top View of SOT-23
S
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
G
Systems.
Ordering and Marking Information
D
P-Channel MOSFET
APM2313
H andling C ode
Temp. Range
Package Code
Package Code
A : SOT-23
O perating Junction Tem p. R ange
C : -55 to 1 50°C
H andling C ode
TR : Tape & Reel
APM2313 A :
M13X
X - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID*
IDM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
-20
V
±10
-1.8
A
-7
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain
the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
1
Rev. A.1 - Jun., 2003
www.anpec.com.tw
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