APTM20DAM04 View Datasheet(PDF) - Advanced Power Technology
Part Name
Description
MFG CO.
'APTM20DAM04' PDF : 6 Pages View PDF
APTM20DAM04
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS = 0V, ID = 500µA
200
VGS = 0V,VDS = 200V Tj = 25°C
VGS = 0V,VDS = 160V Tj = 125°C
V
200
µA
1000
RDS(on) Drain – Source on Resistance
VGS = 10V, ID = 186A
4 mW
VGS(th) Gate Threshold Voltage
IGSS Gate – Source Leakage Current
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
3
5V
±200 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 100V
ID = 372A
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 372A
RG = 1.2W
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 372A, RG = 1.2Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 372A, RG = 1.2Ω
Min Typ Max Unit
28.9
9.32
nF
0.58
560
212
nC
268
32
64
ns
88
116
3396
µJ
3716
3744
µJ
3944
Diode ratings and characteristics
Symbol Characteristic
IF(AV) Maximum Average Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 300A
IF = 600A
IF = 300A
IF = 300A
VR = 133V
di/dt = 600A/µs
IF = 300A
VR = 133V
di/dt = 600A/µs
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
Min Typ Max Unit
Tc = 90°C
300
A
1 1.1
1.4
V
Tj = 125°C
0.9
Tj = 25°C
60
ns
Tj = 125°C
110
Tj = 25°C
600
nC
Tj = 125°C
2520
APT website – http://www.advancedpower.com
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