Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
Crss
100
0
10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM20DAM04
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID= 186A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
10000
Maximum Safe Operating Area
1000
limited by
RDSon
100µs
100
1ms
10
Single pulse
TJ=150°C
1
10ms
100ms
1
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
ID=372A
12 TJ=25°C
10
VDS=40V
VDS=100V
8
VDS=160V
6
4
2
0
0 80 160 240 320 400 480 560 640
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–6