APTM20DAM05 View Datasheet(PDF) - Advanced Power Technology
Part Name
Description
MFG CO.
'APTM20DAM05' PDF : 6 Pages View PDF
APTM20DAM05
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS = 0V, ID = 500µA
200
VGS = 0V,VDS = 200V Tj = 25°C
VGS = 0V,VDS = 160V Tj = 125°C
V
200
µA
1000
RDS(on) Drain – Source on Resistance
VGS = 10V, ID = 158.5A
5 mW
VGS(th) Gate Threshold Voltage
IGSS Gate – Source Leakage Current
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
3
5V
±200 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 100V
ID = 300A
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 300A
RG = 1.2W
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2Ω
Min Typ Max Unit
27.4
8.72
nF
0.38
448
172
nC
188
28
56
ns
81
99
1852
µJ
1820
2432
µJ
2124
Diode ratings and characteristics
Symbol Characteristic
IF(AV) Maximum Average Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 240A
IF = 480A
IF = 240A
IF = 240A
VR = 133V
di/dt = 800A/µs
IF = 240A
VR = 133V
di/dt = 800A/µs
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
Min Typ Max Unit
Tc = 85°C
Tj = 125°C
240
A
1.1 1.15
1.4
V
0.9
Tj = 25°C
31
ns
Tj = 125°C
60
Tj = 25°C
240
nC
Tj = 125°C
1000
APT website – http://www.advancedpower.com
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