Delay Times vs Current
90
80
70
60 VDS=133V
RG=1.2Ω
50 TJ=125°C
40 L=100µH
td(off)
30
td(on)
20
10
50
150 250 350 450 550
ID, Drain Current (A)
Switching Energy vs Current
5
VDS=133V
4 RG=1.2Ω
Eon
TJ=125°C
L=100µH
Eoff
3
2
1
0
50 150 250 350 450 550
ID, Drain Current (A)
Operating Frequency vs Drain Current
350
VDS=133V
300
D=50%
250
RG=1.2Ω
TJ=125°C
200
150
100
50
0
30 70 110 150 190 230 270
ID, Drain Current (A)
APTM20DAM05
Rise and Fall times vs Current
160
VDS=133V
140
RG=1.2Ω
tf
120 TJ=125°C
L=100µH
100
80
tr
60
40
20
0
50 150 250 350 450 550
ID, Drain Current (A)
Switching Energy vs Gate Resistance
6
5.5
VDS=133V
ID=300A
Eoff
5 TJ=125°C
L=100µH
4.5
Eon
4
3.5
3
2.5
2
0 2.5 5 7.5 10 12.5 15
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
TJ=150°C
100
TJ=25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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