AT45DB011B View Datasheet(PDF) - Atmel Corporation
Part Name
Description
MFG CO.
'AT45DB011B' PDF : 32 Pages View PDF
AT45DB011B
DC Characteristics
Symbol
Parameter
Condition
Min
Typ
ISB
Standby Current
CS, RESET, WP = VIH, all inputs at
2
CMOS levels
ICC1(1)
Active Current, Read Operation f = 20 MHz; IOUT = 0 mA; VCC = 3.6V
4
ICC2
Active Current, Program/Erase VCC = 3.6V
10
Operation
ILI
ILO
VIL
VIH
VOL
VOH
Note:
Input Load Current
Output Leakage Current
Input Low Voltage
VIN = CMOS levels
VI/O = CMOS levels
Input High Voltage
Output Low Voltage
IOL = 1.6 mA; VCC = 2.7V
Output High Voltage
IOH = -100 µA
1. Icc1 during a buffer read is 20mA maximum.
2.0
VCC - 0.2V
AC Characteristics
Symbol
fSCK
fCAR
tWH
tWL
tCS
tCSS
tCSH
tCSB
tSU
tH
tHO
tDIS
tV
tXFR
tEP
tP
tPE
tBE
tRST
tREC
Parameter
SCK Frequency
SCK Frequency for Continuous Array Read
SCK High Time
SCK Low Time
Minimum CS High Time
CS Setup Time
CS Hold Time
CS High to RDY/BUSY Low
Data In Setup Time
Data In Hold Time
Output Hold Time
Output Disable Time
Output Valid
Page to Buffer Transfer/Compare Time
Page Erase and Programming Time
Page Programming Time
Page Erase Time
Block Erase Time
RESET Pulse Width
RESET Recovery Time
Min
Typ
22
22
250
250
250
5
10
0
120
10
7
6
7
10
Max
Units
10
µA
10
mA
25
mA
1
µA
1
µA
0.6
V
V
0.4
V
V
Max
20
20
200
18
20
200
20
15
10
15
1
Units
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
ms
ms
ms
µs
µs
13
1984J–DFLASH–06/06
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