AT45DB011B View Datasheet(PDF) - Atmel Corporation
Part Name
Description
MFG CO.
'AT45DB011B' PDF : 32 Pages View PDF
Write
Operations
The following block diagram and waveforms illustrate the various write sequences available.
FLASH MEMORY ARRAY
PAGE (264 BYTES)
BUFFER TO
MAIN MEMORY
PAGE PROGRAM
BUFFER (264 BYTES)
BUFFER
WRITE
I/O INTERFACE
MAIN MEMORY PAGE
PROGRAM THROUGH
BUFFER
Main Memory Page Program through Buffer
CS
SI
CMD
r ···r , PA8-7 PA6-0, BFA8
BFA7-0
SI
· Completes writing into buffer
· Starts self-timed erase/program operation
n
n+1
Last Byte
Buffer Write
CS
SI
CMD
X
X···X, BFA8
BFA7-0
n
· Completes writing into buffer
n+1
Last Byte
Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)
Starts self-timed erase/program operation
CS
SI
CMD
r ···r , PA8-7
PA6-0, X
X
Each transition represents
8 bits and 8 clock cycles
n = 1st byte written
n+1 = 2nd byte written
16 AT45DB011B
1984J–DFLASH–06/06
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