AT45DB080-RC View Datasheet(PDF) - Atmel Corporation
Part Name
Description
MFG CO.
'AT45DB080-RC' PDF : 18 Pages View PDF
AT45DB080
Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
FLASH MEMORY ARRAY
PAGE (264 BYTES)
BUFFER 1 TO
MAIN MEMORY
PAGE PROGRAM
BUFFER 1 (264 BYTES)
BUFFER 1
WRITE
MAIN MEMORY
PAGE PROGRAM
THROUGH BUFFER 2
MAIN MEMORY PAGE
PROGRAM THROUGH
BUFFER 1
I/O INTERFACE
BUFFER 2 TO
MAIN MEMORY
PAGE PROGRAM
BUFFER 2 (264 BYTES)
BUFFER 2
WRITE
I/O7-I/O0 (INPUT)
Main Memory Page Program through Buffers
CS
I/O7-I/O0
(INPUT)
CMD
r r r, PA11-7 PA6-0, BFA8
BFA7-0
n
ADDR
ADDR
ADDR
· Completes writing into selected buffer
· Starts self-timed erase/program operation
n+1
Last Byte
Buffer Write
CS
I/O7-I/O0
(INPUT)
· Completes writing into selected buffer
CMD
X
X···X, BFA8 BFA7-0
n
n+1
ADDR ADDR ADDR
Last Byte
Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)
CS
I/O7-I/O0
(INPUT)
Starts self-timed erase/program operation
CMD
r r r, PA11-7
ADDR
PA6-0, X
ADDR
X
ADDR
Each transition represents
8 bits and 1 clock cycle
n = 1st byte written
n+1 = 2nd byte written
9
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