AT45DB081E-MHN2B-T View Datasheet(PDF) - Unspecified
Part Name
Description
MFG CO.
AT45DB081E-MHN2B-T
Unspecified
'AT45DB081E-MHN2B-T' PDF : 69 Pages View PDF
18.3 DC Characteristics
1.65V to 3.6V
Symbol Parameter
Condition
Min
Typ
Max
IUDPD
Ultra-Deep Power-Down
Current
All inputs at 0V or VCC
0.4
1
IDPD
Deep Power-Down
Current
CS, RESET, WP = VIH
All inputs at CMOS levels
4.5
12
ISB
Standby Current
CS, RESET, WP = VIH
All inputs at CMOS levels
25
40
Active Current, Low
ICC1
Power Read (01h)
Operation
ICC2(1)(2)
Active Current,
Read Operation
ICC3
Active Current,
Program Operation
f = 1MHz; IOUT = 0mA (0x01);
VCC = 3.6V
f = 15MHz; IOUT = 0mA (0x01);
VCC = 3.6V
f = 50MHz; IOUT = 0mA;
VCC = 3.6V
f = 85MHz; IOUT = 0mA;
VCC = 3.6V
CS = VCC
6
9
7
11
10
12
12
15
14
16
ICC4
Active Current,
Erase Operation
CS = VCC
8
12
ILI
Input Load Current
All inputs at CMOS levels
ILO
Output Leakage Current All inputs at CMOS levels
VIL
Input Low Voltage
1
1
VCC x
0.3
VIH
Input High Voltage
VCC x
0.7
VCC +
0.6
VOL
Output Low Voltage
VOH
Output High Voltage
IOL = 100μA
IOH = -100μA
0.4
VCC -
0.2V
Notes: 1. Typical values measured at 3.0V at 25C.
2. ICC2 during a Buffer Read is 20mA maximum @ 20MHz.
2.3V to 3.6V
Min Typ Max
0.4
1
6
12
25
40
6
9
7
11
10
12
12
15
14
16
8
VCC x
0.7
VCC -
0.2V
12
1
1
VCC x
0.3
VCC +
0.6
0.4
Units
μA
μA
μA
mA
mA
mA
mA
mA
mA
μA
μA
V
V
V
V
AT45DB081E [PRELIMINARY DATASHEET] 47
DS-45DB081E-028C–DFLASH–10/2013
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