AT45DB081E-MHN2B-T View Datasheet(PDF) - Unspecified
Part Name
Description
MFG CO.
AT45DB081E-MHN2B-T
Unspecified
'AT45DB081E-MHN2B-T' PDF : 69 Pages View PDF
Note: 1. Values are based on device characterization, not 100% tested in production.
18.5 Program and Erase Characteristics
1.65V to 3.6V 2.3V to 3.6V
Symbol Parameter
Min Typ Max Min Typ Max Units
tEP
tP
tBP
tPE
tBE
tSE
tCE
tSUSP
Page Erase and Programming Time (256/264 bytes)
Page Programming Time
Byte Programming Time
Page Erase Time
Block Erase Time
Sector Erase Time
Chip Erase Time
Suspend Time
Program
Erase
15
40
2
4
8
12
35
30
75
.7
1.3
10
20
10
20
20
40
15
40
ms
2
4
ms
8
μs
12
35
ms
30
75
ms
.7
1.3
s
10
20
s
10
20
μs
20
40
tRES
Resume Time
Program
Erase
10
20
20
40
10
20
μs
20
40
tOTPP
OTP Security Register Program Time
200
500
200
500
μs
Notes: 1. Values are based on device characterization, not 100% tested in production.
2. Not 100% tested (value guaranteed by design and characterization).
19. Input Test Waveforms and Measurement Levels
AC
Driving
Levels
0.9VCC
0.1VCC
tR, tF < 2ns (10% to 90%)
VCC/2
AC
Measurement
Level
20. Output Test Load
Device
Under
Test
30pF
AT45DB081E [PRELIMINARY DATASHEET] 49
DS-45DB081E-028C–DFLASH–10/2013
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