B11NM60FD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
B11NM60FD
STMicroelectronics
'B11NM60FD' PDF : 17 Pages View PDF
STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD<11A, di/dt<400A/µs, VDD<V(BR)DSS, TJ<TJMAX
(*)Limited only by maximum temperature allowed
Value
STP11NM60FD
STB11NM60FD
STB11NM60FD-1
STP11NM60FDFP
600
600
±30
11
11 (*)
7
7 (*)
44
44 (*)
160
35
0.88
0.28
20
--
2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
–65 to 150
°C
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature For Soldering Purpose
TO-220/I2PAK
D2PAK
0.78
62.5
300
TO-220FP
3.57
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Max Value
Unit
5.5
A
350
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
600
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
100
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100 nA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 5.5 A
0.40 0.45
Ω
2/13
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