B11NM60FD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
B11NM60FD
STMicroelectronics
'B11NM60FD' PDF : 17 Pages View PDF
STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 5.5A
5.2
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1000
pF
Coss
Output Capacitance
208
pF
Crss
Reverse Transfer
Capacitance
28
pF
Coss eq. (2) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
100
pF
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3
Ω
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 250V, ID = 5.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 400V, ID = 11A,
VGS = 10V
Test Conditions
VDD = 400V, ID = 11A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 11A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 11A, di/dt = 100A/µs,
VDD = 50V
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
20
16
28
7.8
13
Max.
40
Unit
ns
ns
nC
nC
nC
Min.
Typ.
10
15
24
Max.
Unit
ns
ns
ns
Min.
Typ.
190
1.1
14.5
Max.
11
44
1.5
Unit
A
A
V
ns
µC
A
3/13
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