B20NM50FD-1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
B20NM50FD-1
STMicroelectronics
'B20NM50FD-1' PDF : 9 Pages View PDF
STP20NM50FD/STB20NM50FD-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤ 20A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl
Maximum Lead Temperature For Soldering Purpose
Value
500
500
±30
20
14
80
192
1.2
20
–65 to 150
150
0.65
62.5
300
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Max Value
Unit
10
A
700
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
500
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
nA
VGS(th Gate Threshold Voltage VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 10A
0.22
0.25
Ω
2/9
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