B20NM50FD-1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
B20NM50FD-1
STMicroelectronics
'B20NM50FD-1' PDF : 9 Pages View PDF
STP20NM50FD/STB20NM50FD-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 10A
9
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1380
pF
Coss
Output Capacitance
290
pF
Crss
Reverse Transfer
40
pF
Capacitance
Coss eq. (2) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
130
pF
Rg
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
2.8
Ω
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 250V, ID = 10 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 400V, ID = 20A,
VGS = 10V
Test Conditions
VDD = 400V, ID = 20 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
22
20
38
18
10
Max. Unit
ns
ns
53
nC
nC
nC
Min.
Typ.
6
15
30
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 20 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs,
VDD = 60V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
245
2
16
Max.
20
80
1.5
Unit
A
A
V
ns
µC
A
3/9
Share Link: 