BAS4 View Datasheet(PDF) - Philips Electronics

Part Name

Description

MFG CO.

BAS4

Low-leakage diode

Philips Electronics 

1 2 3 4 5 6 7 8

Philips Semiconductors

Low-leakage diode

Product specification

BAS45AL

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

CONDITIONS

TYP.

see Fig.3

IF = 1 mA

−

IF = 10 mA

−

IF = 100 mA

−

see Fig.5

VR = 125 V; Emax = 100 lx

−

VR = 30 V; Tj = 125 °C; Emax = 100 lx −

VR = 125 V; Tj = 125 °C; Emax = 100 lx −

VR = 125 V; Tj = 150 °C; Emax = 100 lx −

f = 1 MHz; VR = 0; see Fig.6

−

when switched from IF = 10 mA to

1.5

IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA; see Fig.7

MAX. UNIT

780

mV

860

mV

1000 mV

1

nA

300

nA

500

nA

2

µA

4

pF

−

µs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

Note

1. Device mounted on a FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

300

375

UNIT

K/W

K/W

1999 May 28

3

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