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Part Name
Description
BAS4 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BAS4
Low-leakage diode
Philips Electronics
'BAS4' PDF : 8 Pages
View PDF
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Philips Semiconductors
Low-leakage diode
Product specification
BAS45AL
handboo
1
k,
0
h
4
alfpage
IR
(nA)
10
3
10
2
10
1
10
1
0
50
MBD456
max
typ
100
T j (
o
C)
150
V
R
= 125 V.
Fig.5 Reverse current as a function of junction
temperature.
3
handbook, halfpage
Cd
(pF)
2
MBG524
1
0
0
5
10
15
VR (V)
20
f = 1 MHz; T
j
= 25
°
C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
RS = 50
Ω
V = VR IF x R
S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
VR
MGA881
tr
tp
10%
90%
input signal
t
IF
t
rr
t
(1)
output signal
1999 May 28
Fig.7 Reverse recovery time test circuit and waveforms.
5
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