BAS40-06 View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd
Part Name
Description
MFG CO.
BAS40-06
Jiangsu High diode Semiconductor Co., Ltd
'BAS40-06' PDF : 4 Pages View PDF
BAS40/-04/-05/-06
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
● Low Forward Voltage
● Fast Switchi
SOT- 23
3
Marking:
BAS40
BAS40-06
BAS40-05
BAS40-04
2
1
MARKING: 4 3
MARKING:4 6
MARKING 4 5
MARKING:4 4
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Power dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature range
Symbol
VRRM
VRWM
VR
IFM
PD
RθJA
TJ
TSTG
Limit
40
200
200
500
125
-55~+150
Unit
V
mA
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V(BR)
IR=10μA
40
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
IR
VR=30V
VF
IF=1mA
IF=40mA
CD
VR=0,f=1MHz
t rr
Irr=1mA, IR=IF=10mA
R =100Ω
Max
200
380
1000
5
5
Unit
V
nA
mV
pF
ns
High Diode Semiconductor
1
Share Link: 