BAS40-06 View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd
Part Name
Description
MFG CO.
BAS40-06
Jiangsu High diode Semiconductor Co., Ltd
'BAS40-06' PDF : 4 Pages View PDF
Typical Characteristics
Forward Characteristics
100
Ta=100℃
10
1
Ta=25℃
0.1
0.0
0.2
0.4
0.6
0.8
1.0
FORWARD VOLTAGE VF (V)
Capacitance Characteristics
4.0
Ta=25℃
f=1MHz
3.5
3.0
2.5
2.0
1.5
1.0
0
5
10
15
20
25
30
REVERSE VOLTAGE VR (V)
100
10
1
0.1
0.01
1E-3
0
0.25
0.20
0.15
0.10
0.05
0.00
0
Reverse Characteristics
Ta=100℃
Ta=25℃
10
20
30
40
REVERSE VOLTAGE VR (V)
Power Derating Curve
25
50
75
100
125
AMBIENT TEMPERATURE TJ (℃)
High Diode Semiconductor
2
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