BC869 View Datasheet(PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Part Name

Description

MFG CO.

BC869

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

1 2

Plastic-Encapsulate Transistors

FEATURES

• NPN Complement to BC868

• Low Voltage

•High Current

Maximum Ratings (Ta=25 unless otherwise noted)

Parameter

Symbol Value

Collector-Base Voltage

VCBO

-32

Collector-Emitter Voltage

VCEO

-20

Emitter-Base Voltage

VEBO

-5

Collector Current -Continuous

IC

-1

Collector Power dissipation

PC

Thermal Resistance From Junction To Ambient RθJA

Storage Temperature

Tstg

0.5

250

-55to +150

Unit

V

V

V

A

W

BC869 (PNP)

1. BASE

2. COLLECTO

3. EMITTER

SOT-89

ELECTRICAL CHARACTERISTICS ( @ Ta=25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Symbol

VCBO

VCEO

VEBO

ICBO

IEBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

Base -emitter voltage

VBE

Transition frequency

fT

unless otherwise specified)

Test conditions

IC=-100µ A,IE=0

IC=-1mA,IB=0

IE=-100µ A,IC=0

VCB=-25V,IE=0

VEB=-5V,IC=0

VCE=-10V, IC=-5mA

VCE=-1V, IC=-0.5A

VCE=-1V, IC=-1A

IC=-1A,IB=-0.1A

VCE=-1V, IC=-1A

VCE=-10V, IC=-5mA

VCE=-5V,IC=-10mA, f=100MHz

Min Typ Max

-32

-20

-5

-0.1

-0.1

50

100

375

60

-0.5

-1

-0.62

40

Unit

V

V

V

µA

µA

V

V

V

MHz

CLASSIFICATION OF hFE

Rank

Range

Marking

BC869

100-375

CEC

BC869-16

100-250

CGC

BC869-25

160-375

CHC

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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