BFS19 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'BFS19' PDF : 8 Pages View PDF
Philips Semiconductors
NPN medium frequency transistor
Product specification
BFS19
FEATURES
• Low current (max. 30 mA)
• Low voltage (max. 20 V).
APPLICATIONS
• Medium frequency applications in thick and thin-film
circuits.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
TYPE NUMBER
BFS19
MARKING CODE(1)
F2∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
30
20
5
30
30
250
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
1999 Apr 15
2
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