BFS19 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'BFS19' PDF : 8 Pages View PDF
Philips Semiconductors
NPN medium frequency transistor
Product specification
BFS19
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VBE
base-emitter voltage
Cc
collector capacitance
Cre
feedback capacitance
fT
transition frequency
CONDITIONS
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 100 °C
IC = 0; VEB = 5 V
IC = 1 mA; VCE = 10 V
IC = 1 mA; VCE = 10 V
IE = 0; VCB = 10 V; f = 1 MHz
IC = 0 mA; VCB = 10 V; f = 1 MHz
IC = 1 mA; VCE = 10 V; f = 100 MHz
VALUE
500
UNIT
K/W
MIN. TYP. MAX. UNIT
−
−
100 nA
−
−
10 µA
−
−
100 nA
65 −
225
650 −
740 mV
−
1
−
pF
−
0.85 −
pF
−
260 −
MHz
1999 Apr 15
3
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