BSM100GT120DN2 View Datasheet(PDF) - Siemens AG
Part Name
Description
MFG CO.
'BSM100GT120DN2' PDF : 9 Pages View PDF
BSM 100 GT 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 4 mA
Collector-emitter saturation voltage
VGE = 15 V, IC = 100 A, Tj = 25 °C
VGE = 15 V, IC = 100 A, Tj = 125 °C
Zero gate voltage collector current
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V
VGE(th)
VCE(sat)
-
-
ICES
-
-
IGES
-
V
2.5
3
3.1
3.7
mA
1.5
2
6
-
nA
-
400
AC Characteristics
Transconductance
gfs
S
VCE = 20 V, IC = 100 A
54
-
-
Input capacitance
Ciss
nF
VCE = 25 V, VGE = 0 V, f = 1 MHz
-
6.5
-
Output capacitance
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
-
1
-
Reverse transfer capacitance
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
-
0.5
-
Semiconductor Group
2
Aug-23-1996
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