BSM100GT120DN2 View Datasheet(PDF) - Siemens AG
Part Name
Description
MFG CO.
'BSM100GT120DN2' PDF : 9 Pages View PDF
BSM 100 GT 120 DN2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 6.8 Ω
10 3
t
ns
tdoff
tdon
tr
10 2
tf
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 100 A
10 4
ns
t
10 3
tdoff
tdon
tr
10 2
tf
10 1
0
50
100
150
A
250
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 6.8 Ω
60
Eon
mWs
E
10 1
0
10
20
30
40
Ω
60
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 100 A
60
mWs
E
40
40
Eon
30
30
20
Eoff
10
0
0
50
100
150
Semiconductor Group
A
250
IC
7
20
Eoff
10
0
0
10
20
30
40
Ω
60
RG
Aug-23-1996
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