BSM50GB120DLC View Datasheet(PDF) - eupec GmbH

Part Name

Description

MFG CO.

BSM50GB120DLC

IGBT-Modules

eupec GmbH 

1 2 3 4 5 6 7 8 9

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

BSM50GB120DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor

Einschaltverzögerungszeit (ind. Last)

turn on delay time (inductive load)

Anstiegszeit (induktive Last)

rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)

turn off delay time (inductive load)

Fallzeit (induktive Last)

fall time (inductive load)

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

Kurzschlußverhalten

SC Data

Modulinduktivität

stray inductance module

IC = 50A, VCE = 600V

VGE = ±15V, RG = 15Ω, Tvj = 25°C

VGE = ±15V, RG = 15Ω, Tvj = 125°C

IC = 50A, VCE = 600V

VGE = ±15V, RG = 15Ω, Tvj = 25°C

VGE = ±15V, RG = 15Ω, Tvj = 125°C

IC = 50A, VCE = 600V

VGE = ±15V, RG = 15Ω, Tvj = 25°C

VGE = ±15V, RG = 15Ω, Tvj = 125°C

IC = 50A, VCE = 600V

VGE = ±15V, RG = 15Ω, Tvj = 25°C

VGE = ±15V, RG = 15Ω, Tvj = 125°C

IC = 50A, VCE = 600V, VGE = ±15V

RG = 15Ω, Tvj = 125°C, Lσ = 120nH

IC = 50A, VCE = 600V, VGE = 15V

RG = 15Ω, Tvj = 125°C, Lσ = 120nH

tP ≤ 10µs, VGE ≤ 15V, RG = 15Ω

TVj≤125°C, VCC=900V, VCEmax=VCES -LσCE ·di/dt

Modul Leitungswiderstand, Anschlüsse – Chip

module lead resistance, terminals – chip

TC=25°C

min. typ. max.

td,on

-

0,05

-

µs

-

0,06

-

µs

tr

-

0,05

-

µs

-

0,05

-

µs

td,off

-

0,25

-

µs

-

0,30

-

µs

tf

-

0,03

-

µs

-

0,07

-

µs

Eon

-

6,4

-

mJ

Eoff

-

6,2

-

mJ

ISC

LσCE

-

400

-

40

-

A

-

nH

RCC‘+EE‘

-

1,0

-

mΩ

Charakteristische Werte / Characteristic values

Diode / Diode

Durchlaßspannung

forward voltage

IF = 50A, VGE = 0V, Tvj = 25°C

IF = 50A, VGE = 0V, Tvj = 125°C

Rückstromspitze

peak reverse recovery current

IF = 50A, - diF/dt = 1300A/µs

VR = 600V, VGE = -15V, Tvj = 25°C

VR = 600V, VGE = -15V, Tvj = 125°C

Sperrverzögerungsladung

recovered charge

IF = 50A, - diF/dt = 1300A/µs

VR = 600V, VGE = -15V, Tvj = 25°C

VR = 600V, VGE = -15V, Tvj = 125°C

Abschaltenergie pro Puls

reverse recovery energy

IF = 50A, - diF/dt = 1300A/µs

VR = 600V, VGE = -15V, Tvj = 25°C

VR = 600V, VGE = -15V, Tvj = 125°C

min. typ. max.

VF

-

1,8

2,3

V

-

1,7

2,2

V

IRM

-

52

-

A

-

66

-

A

Qr

-

5,1

-

µC

-

10,7

-

µC

Erec

-

1,9

-

mJ

-

4

-

mJ

2(8)

DB_BSM50GB120DLC_3.0

2003-01-10

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