BUV23 View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

MFG CO.

BUV23

POWER SWITCH APPLICATIONS

Comset Semiconductors 

1 2

NPN BUV23

POWER SWITCH APPLICATIONS

The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.

They are intended for use in power switching appications in military and industrial equipments.

ABSOLUTE MAXIMUM RATINGS

Symbol

VCEO

VCBO

VEBO

VCEX

VCER

IC

ICM

IB

Pt

TJ

TStg

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector-Emitter Voltage

Collector-Emitter Voltage

Collector Current

Collector Peak Current

Base Current

Total Power Dissipation

Junction Temperature

Storage Temperature

THERMAL CHARACTERISTICS

Symbol

RthJC

Ratings

Thermal Resistance, Junction to Case

IB = 0

IE = 0

IC = 0

VBE = -1.5V

RBE <= 100 Ω

tp = 10ms

@ TC = 25°

Value

325

400

7.0

400

390

30

40

6

250

200

-65 to +200

Unit

V

V

V

V

V

A

A

A

Watts

°C

°C

Value

0.7

Unit

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

VCEO(SUS)

VEB0(SUS)

ICEO

ICEX

Ratings

Collector-Emitter

Sustaining Voltage (1)

Emitter-BaseBreakdown

Voltage (1)

Collector Cutoff Current

Collector Cutoff Current

Test Condition(s)

IC=200 mA, L= 25mH

IC=0A , IE=50 mA

VCE=260 V , IB=0A

VCE= VCEX , VBE= -1.5V

VCE= VCEX , VBE= -1.5V, Tcase = 125°C

COMSET SEMICONDUCTORS

Min Typ Mx Unit

325 - -

V

7- -

V

- - 3 mA

-

-

-

-

3

12

mA

1/2

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