CD22100F View Datasheet(PDF) - Harris Semiconductor
Part Name
Description
MFG CO.
CD22100F
Harris Semiconductor
'CD22100F' PDF : 9 Pages View PDF
SEMICONDUCTOR
CD22100
January 1997
CMOS 4 x 4 Crosspoint Switch with Control Memory
High-Voltage Type (20V Rating)
Features
Description
• Low ON Resistance . . . . . . . . . .75Ω (Typ) at VDD = 12V
• “Built-In” Control Latches
• Large Analog Signal Capability . . . . . . . . . . . . . . . ±VDD/2
• 10MHz Switch Bandwidth
• Matched Switch Characteristics ∆RON = 18Ω (Typ) at
VDD = 12V
• High Linearity - 0.5% Distortion (Typ) at f = 1kHz,
VIN = 5VP-P, VDD = 10V, and RL = 1kΩ
• Standard CMOS Noise Immunity
• 100% Tested for Maximum Quiescent Current at 20V
CD22100 combines a 4 x 4 array of crosspoints (transmis-
sion gates) with a 4-line to 16-line decoder and 16 latch
circuits. Any one of the sixteen transmission gates (cross-
points) can be selected by applying the appropriate four line
address. The selected transmission gate can be turned on or
off by applying a logic one or zero, respectively, to the data
input and strobing the strobe input to a logic one. Any
number of the transmission gates can be ON simultaneously.
When the required operating power is applied to the
CD22100, the states of the 16 switches are indeterminate.
Therefore, all switches must be turned off by putting the
strobe high and data in low, and then addressing all switches
in succession.
Ordering Information
PART
NUMBER
CD22100E
CD22100F
TEMP. RANGE
(oC)
PACKAGE
-40 to 85 16 Ld PDIP
-55 to 125 16 Ld CERDIP
PKG. NO.
E16.3
F16.3
Pinout
CD22100
(PDIP, CERDIP)
TOP VIEW
X2 1
DATA IN 2
C3
D4
B5
A6
STROBE 7
VSS 8
16 VDD
15 Y1
14 Y2
13 X4
12 X3
11 Y4
10 Y3
9 X1
Functional Diagram
STROBE
7
DATA
IN
2
6
A
5
B
3
C
4
D
15
0
1
2
3
Y1
14
4
5
6
7
Y2
10
8
9
10
11
Y3
11
12
13
14
15
Y4
9
1
X1
X2
12
X3
13
X4
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © Harris Corporation 1997
4-184
File Number 1076.3
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