CHA2069-QDG21 View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
'CHA2069-QDG21' PDF : 18 Pages View PDF
CHA2069-QDG
18-30GHz Low Noise Amplifier
Electrical Characteristics (low current configuration)
Tamb = +25°C, Vd = +4.5V Pads: VgB, VgD, VgE=GND
Symbol
Parameter
Fop Operating frequency range
Min Typ Max
18
30
G
Gain
16.5 19.5
∆G
Gain flatness
±2 ±2.5
NF
Noise figure ( 18 – 26.5GHz )
3
4
IS11I Input return loss ( 18 – 26.5GHz )
-5
-3
IS22I Ouput return loss ( 18 – 26.5GHz )
-7
-3
IP3 3rd order intercept point (Pout/tone=-5dBm)
18-26GHz
16.5 18.5
P1dB Output power at 1dB gain compression
18-26GHz
9.0 10.5
Id
Drain bias current
65
Unit
GHz
dB
dB
dB
dB
dB
dBm
dBm
mA
These values are representative of onboard measurements as defined on the drawing 95541 (see
below).
Performances can be optimized thanks to external matching (refer to the “Sub-band enhancement”
section below).
Electrical Characteristics (high current configuration)
Tamb = +25°C, Vd = +4,5V Pads: VgB, VgC, VgF=GND
Symbol
Fop
G
∆G
NF
IS11I
IS22I
IP3
P1dB
Id
Parameter
Operating frequency range
Gain
Gain flatness
Noise figure ( 18 – 26.5GHz )
Input return loss ( 18 – 26.5GHz )
Ouput return loss ( 18 – 26.5GHz )
3rd order intercept point (Pout/tone=-5dBm)
18-26 GHz
Output power at 1dB gain compression
18-26 GHz
Drain bias current
Min Typ Max
18
30
17 20
±2 ±2.5
3
4
-5
-3
-7
-3
18 20
12 13.5
85
Unit
GHz
dB
dB
dB
dB
dB
dBm
dBm
mA
These values are representative of onboard measurements as defined on the drawing 95541 (see
below).
Performances can be optimized thanks to external matching (refer to the “Sub-band enhancement”
section below).
Ref. : DSCHA2069QDG6332 - 28 Nov 06
2/18
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
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