CHA2296-99F/00 View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
'CHA2296-99F/00' PDF : 7 Pages View PDF
CHA2296
9-19GHz Buffer Splitter Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V Vg tuned for Id=190mA
Symbol
Parameter
Fop
Operating frequency range (1)
Min Typ Max Unit
9
19
GHz
G
Small signal gain (1)
13
16
dB
∆G
Small signal gain flatness (1)
±1.5
dB
Is
Reverse isolation (1)
60
dB
Ic
Isolation between channels (1)
20
dB
Psat
Saturated output power (1)
12
14
dBm
VSWRin Input VSWR (1)
2.0:1
VSWRout Output VSWR (1)
2.0:1
Id_small signal Bias current
190
250
mA
(1) These values are representative for on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vds
Drain bias voltage_small signal
4.0
V
Ids
Drain bias current_small signal
300
mA
Vgs
Gate bias voltage
-2 to +0.4
V
Vdg
Negative Drain Gate voltage (= Vds – Vgs)
Pin
Maximum peak input power overdrive (2)
+5
V
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA22962044 13-Feb.-02
2/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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