CHA3023-99F View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
CHA3023-99F
United Monolithic Semiconductors
'CHA3023-99F' PDF : 8 Pages View PDF
CHA3023
1-18GHz Wide Band Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd=5V,
Vg1=-0.3V tuned to have Id=95mA
Vg2=+2V
Symbol
Parameter
Fop Operating frequency range
G Small signal gain
F= 1 to 3GHz
F= 3 to 18GHz
∆G Small signal gain flatness
P1dB Output power at 1dB gain compression
VSWRin Input VSWR
VSWRout Output VSWR
NF Noise Figure
F= 1 to 4GHz
F= 1 to 18GHz
Vdc DC voltage
Vd
Vg1
Vg2
Id Bias current
Min Typ Max Unit
1
18 GHz
11.5
12.5
15
13
14
± 0.7
17
2.2:1
2.2:1
dB
dB
dB
dBm
4
6
dB
2.5
4
dB
+5
V
-0.3
V
+2
V
95
mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg1
Vg2
Pin
Pin
Top
Tstg
Parameter
Drain to ground bias voltage
Drain current
Gate to ground bias voltage
Gate to ground bias voltage
Maximun peak input power overdrive (2)
Maximum input CW power
Operating temperature
Storage temperature range
Min.
0
-1.5
0
-40
-55
Max.
6.5
110
0.3
3
+15
+10
85
125
Unit
V
mA
V
V
dBm
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage
(2) Duration < 1s
DSCHA30235263 - 20 sep 05
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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