CHA3023-99F View Datasheet(PDF) - United Monolithic Semiconductors

Part Name

Description

MFG CO.

CHA3023-99F

1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC

United Monolithic Semiconductors 

1 2 3 4 5 6 7 8

CHA3023

1-18 GHz Wide Band Amplifier

Chip Assembly and Mechanical Data

Special care should be taken concerning the biasing procedure. Apply Vg before Vd.

Equivalent wire

bonding : 0.15 nH

Equivalent wire

bonding : 0.15 nH

The CHA3023 could be used without Vg2 bias. There is a resistor bridge inside the chip. This

one generates the correct value of Vg2 Bias. Pads G2a and G2 must be connected.

Equivalent RF Wire Bondings: 0.15 nH (typical length of 200µm for a 25µm diameter wire).

Equivalent wire

bonding : 0.15 nH

Equivalent wire

bonding : 0.15 nH

DSCHA30235263 - 20 sep 05

7/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Share Link: