CHA3092-99F View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
'CHA3092-99F' PDF : 6 Pages View PDF
CHA3092
20-33GHz Medium Power Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3,4 = 3.5V recommended
Symbol
Fop
Parameter
Operating frequency range (1)
Min Typ Max Unit
20
33
GHz
G
Small signal gain (1)
20
22
dB
∆G
Small signal gain flatness (1)
±1.0
dB
Is
Reverse isolation (1)
50
dB
P1dB
Pulsed output power at 1dB compression (1)
18
20
dBm
P03
Output power at 3dB gain compression
IP3
3rd order intercept point
20
23
29
dBm
dBm
PAE
Power added efficiency at saturation
10
%
VSWRin Input VSWR (1)
2.0:1
VSWRout Output VSWR (1)
3.0:1
NF
Noise figure
10.0
dB
Vdet
Detected voltage: at 26GHz @ Pout=20dBm (2)
1
V
Id_small signal Bias current
300
400
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports. In the case of a jig or a module CW mode operation, the typical
output power may be around 2dB less.
(2) Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vds
Drain bias voltage_small signal (2)
4.0
V
Ids
Drain bias current_small signal
400
mA
Vgs
Gate bias voltage
-2 to +0.4
V
Vdg
Negative Drain Gate voltage (= Vds – Vgs)
+5
V
Pin
Maximum continuous input power (2)
Maximum peak input power overdrive (3)
+4
dBm
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) 3.5V recommended for up to a max of 3dB gain compression.
(3) Duration < 1s.
Ref. : DSCHA30920356 21-Dec.-00
2/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Share Link: 
