CHA3092
20-33GHz Medium Power Amplifier
Typical On wafer Power Measurements
Bias Conditions : Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 = -0.15 Volt, Id = 300 mA.
On wafer Pin / Pout at 20 GHz
25
30
24
27
23
24
22
21
21
18
20
15
19
12
18
9
17
6
16
3
15
0
-3 -2 -1 0 1 2 3 4 5
Pin ( dBm )
On wafer Pin / Pout at 26 GHz
25
30
24
27
23
24
22
21
21
18
20
15
19
12
18
9
17
6
16
3
15
0
-3 -2 -1 0 1 2 3 4 5
Pin ( dBm )
On wafer Pin / Pout at 22 GHz
25
30
24
27
23
24
22
21
21
18
20
15
19
12
18
9
17
6
16
3
15
0
-3 -2 -1 0 1 2 3 4 5
Pin ( dBm )
On wafer Pin / Pout at 28 GHz
25
30
24
27
23
24
22
21
21
18
20
15
19
12
18
9
17
6
16
3
15
0
-3 -2 -1 0 1 2 3 4 5
Pin ( dBm )
Notes :
1- Test conditions :
Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 = -0.15 Volt.
2- Power measurements are typical
( solid lines ).
P.A.E. is representative of on wafer
measurements on a typical circuit
( Dotted lines ).
Ref. : DSCHA30920356 21-Dec.-00
4/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09