CHA3092RBF View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
'CHA3092RBF' PDF : 8 Pages View PDF
CHA3092RBF
20-30GHz Medium Power Amplifier
Schematic
Typical Bias Conditions
for an ambient Temperature of +25°C
Symbol Pin No.
Parameter
Values Unit
Vd
7
Drain bias voltage
3.5
V
Vg1,2,3,4 1 & 2 First & second stages gate bias voltage
-0.2
V
Idd
7
Drain current
All other pins are not used for this device.
300 mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vds
Drain bias voltage_small signal (2)
4.0
V
Ids
Drain bias current_small signal
400
mA
Vgs
Gate bias voltage
-2 to +0.4
V
Vdg
Negative Drain Gate voltage (= Vds – Vgs)
+5
V
Pin
Maximum continuous input power (2)
Maximum peak input power overdrive (3)
+4
dBm
+15
dBm
Ta
Operating temperature range (4)
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) 3.5V recommended for up to a max of 3dB gain compression.
(3) Duration < 1s.
(4) Upper temperature limit strongly dependent on motherboard design; ratings given for
ideal thermal coupling
Ref. : DSCHA3092RBF2057 -26-Feb.-01-
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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