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CHA4094-99F View Datasheet(PDF) - United Monolithic Semiconductors

Part Name
Description
MFG CO.
CHA4094-99F
UMS
United Monolithic Semiconductors UMS
'CHA4094-99F' PDF : 4 Pages View PDF
1 2 3 4
CHA4094
36-40GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4094 is a high gain broadband three-
stage balanced monolithic power amplifier. It is
designed for a wide range of applications, from
military to commercial communication systems.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Broadband performances
22 dBm output power ( 1dB gain comp. )
9 dB ± 1 dB gain
Chip size : 1.65 X 2.05 X 0.10 mm
Typical on wafer measurements :
15
10
Gain
5
0
-5
-10
(dB)-15
-20
OUT
IN
-25
-30
28 30 32 34 36 38 40 42
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
P1dB Output power at 1dB gain compression
Id
Bias current
Min Typ Max Unit
36
40
GHz
7
9
dB
22
dBm
750
920
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA40949349 – 15 Dec. 99
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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