CHA5051-QDG View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
CHA5051-QDG
United Monolithic Semiconductors
'CHA5051-QDG' PDF : 10 Pages View PDF
CHA5051-QDG
7-16GHz Medium Power Amplifier
Electrical Characteristics
Tamb.=25°C, Vd=4.5V and Id=310mA
These values are representative of on board measurements as defined on the drawing
96270B
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
P1dB Pulsed output power at 1dB compression
P03 Output power at 3dB gain compression
NF Noise Figure
VSWRin Input VSWR
VSWRout Output VSWR
IP3 Output IP3 from 7 to 12GHz
from 13 to 16 GHz
Vd
DC voltage
Id
Bias current
Min Typ Max Unit
7
16
GHz
25
dB
25
dBm
26
3.2
2.0:1
dBm
dB
2.0:1
32
29
4.5
310
dBm
V
mA
Absolute Maximum Ratings
Tamb.=25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum Drain bias voltage
+5
V
Id
Power supply quiescent current
390
mA
Vg
Gate bias voltage
-2 to +0.4
V
Pin
Maximum input power overdrive(2)
+10
dBm
Tj
Maximum channel temperature (3)
+175
°C
Top
Operating temperature range
-40 to +80
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
(3) Thermal Resistance channel to ground paddle =67.6°C/W for Tpaddle.=+80°C
Ref. : DSCHA5051-QDG7152 - 01 Jun 07
2/10
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
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