CHA5052-98F View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
'CHA5052-98F' PDF : 10 Pages View PDF
CHA5052
7-16GHz High Power Amplifier
Electrical Characteristics
Tamb. = 25°C, Vd = 5 V and Id = 700 mA, CW biasing mode. These values are representative of
on wafer measurements.
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range
7
16
G_1 Small signal gain (7 to 14GHz)
21
G_2 Small signal gain (14 to 16GHz)
17
P1dB_1 Output power at 1dB compression (7 to 14GHz)
29
P1dB_2 Output power at 1dB compression (14 to 16GHz)
26
Psat_1 Saturated output power (7 to 14GHz)
30
Psat_2 Saturated output power (14 to 16GHz)
29
S11 Input return loss
2.0:1
S22 Ouput return loss
2.2:1
IP3 Output IP3
37
Vg Negative gate bias voltage
-1.7
Vd 1,2,3 Positive drain bias voltage
5
Id Power supply quiescent current (1)
700
Id_1dBc Power supply @1dB gain compression
900
Id_sat Power supply in saturation mode
(1) This value is fixed by gate voltage Vg
1000
GHz
dB
dB
dBm
dBm
dBm
dBm
dBm
V
V
mA
mA
mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum Drain bias voltage
+5.5
V
Id
Power supply quiescent current
800
mA
Vg
Gate bias voltage
-4 to +0.8
V
Pin
Maximum input power overdrive
+15.0
dBm
Tch
Maximum channel temperature
+175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA50527092 - 02 Apr 07
2/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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