CHA7010-99F View Datasheet(PDF) - United Monolithic Semiconductors

Part Name

Description

MFG CO.

CHA7010-99F

X-band GaInP HBT High Power Amplifier

United Monolithic Semiconductors 

1 2 3 4 5 6 7

X-band High Power Amplifier

CHA7010

Typical measured characteristics

Measurements in test fixture :

Tamb=25°C, Vc=9V, Ic (Quiescient) = 2.4A, Pulse width=80µs , Duty cycle = 30%

42

40

38

36

34

32

30

28

26

24

Pout @ pin = 27 dBm

22

Pae @ pin = 27 dBm

20

18

gain @ pin = 27 dBm

16

Ic @ pin = 27 dBm

14

12

10

3900

3700

3500

3300

3100

2900

2700

2500

2300

2100

1900

1700

1500

8,4 8,6 8,8 9 9,2 9,4 9,6 9,8 10 10,2 10,4

Frequency (GHz)

Saturated output power, PAE, Gain and collector current versus frequency

Ref. DSCHA70104054 - 23 Feb 04

4/7

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Specifications subject to change without notice

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