CHA7010-99F View Datasheet(PDF) - United Monolithic Semiconductors

Part Name

Description

MFG CO.

CHA7010-99F

X-band GaInP HBT High Power Amplifier

United Monolithic Semiconductors 

1 2 3 4 5 6 7

X-band High Power Amplifier

Assembly recommendations

CHA7010

For thermal and electrical considerations, the chip should be brazed on a metal base plate.

The RF, DC and modulation port inter-connections should be done according to the following table:

Port

Connection

External capacitor

IN (24)

OUT (12)

Vc (5, 10, 14, 19)

Inductance (Lbonding) = 0.4nH

Inductance (Lbonding) = 0.4nH

Inductance ~ 1nH

Vctr (3, 8, 16, 21)

Inductance ~ 1nH

C1 ~ 100pF

C2 ~ 10nF

C3 ~220 nF

C1 ~ 100pF

Ref. DSCHA70104054 - 23 Feb 04

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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Specifications subject to change without notice

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