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CMF20120D View Datasheet(PDF) - Cree, Inc

Part Name
Description
MFG CO.
CMF20120D
Cree
Cree, Inc Cree
'CMF20120D' PDF : 8 Pages View PDF
1 2 3 4 5 6 7 8
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Unit
Test Conditions
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
gfs
Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Eoss
Coss Stored Energy
1200
2.65
3.2
2.0
2.45
1
10
80
95
7.9
7.4
1915
120
13
62
4
4.8
100
250
0.25
100
120
V VGS = 0V, ID = 100μA
VDS = VGS, ID = 1mA
V
VDS = VGS, ID = 10mA
VDS = VGS, ID = 1mA, TJ = 135ºC
V
VDS = VGS, ID = 10mA, TJ = 135ºC
VDS = 1200V, VGS = 0V
μA
VDS = 1200V, VGS = 0V, TJ = 135ºC
μA VGS = 20V, VDS = 0V
VGS = 20V, ID = 20A
m
VGS = 20V, ID = 20A, TJ = 135ºC
VDS= 20V, IDS= 20A
S
VDS= 20V, IDS= 20A, TJ = 135ºC
VGS = 0V
pF VDS = 800V
f = 1MHz
μJ VAC = 25mV
td(on)v
tfv
td(off)v
trv
RG
Turn-On Delay Time
Fall Time
Turn-Off Delay Time
Rise Time
Internal Gate Resistance
13
VDD = 800V, VGS = 0/20V
24
ID = 20A
40
ns RG(ext) = 2.5Ω, RL = 40Ω
38
Timing relative to VDS
5
Ω f = 1MHz, VAC = 25mV
Note
Fig. 11
Fig. 3
Fig. 6
Fig. 13
Fig. 14
Fig. 17
Built-in SiC Body Diode Characteristics
Symbol Parameter
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Peak Reverse Recovery Current
Typ.
3.5
3.1
220
142
2.3
Thermal Characteristics
Max.
Unit
V
ns
nC
A
Test Conditions
VGS = -5V, IF=10A, TJ = 25ºC
VGS = -2V, IF=10A, TJ = 25ºC
VGS = -5V, IF=20A, TJ = 25ºC
VR = 800V,
diF/dt= 100A/μs
Symbol Parameter
RθJC
Thermal Resistance from Junction to Case
RθCS
Case to Sink, w/ Thermal Compound
RθJA
Thermal Resistance From Junction to Ambient
Typ.
0.44
0.25
Gate Charge Characteristics
Symbol Parameter
Qgs
Gate to Source Charge
Qgd
Gate to Drain Charge
Qg
Gate Charge Total
Typ.
23.8
43.1
90.8
Max.
0.51
40
Unit
K/W
Test Conditions
Max.
Unit
Test Conditions
VDD = 800V, VGS = 0/20V
nC ID =20A
Per JEDEC24 pg 27
Note
Fig. 22
Note
Fig. 7
Note
Fig.
12
2
CMF20120D Rev. D
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